Invention Grant
- Patent Title: Back side illuminaton image sensor and method for manufacturing the same
- Patent Title (中): 背面照明图像传感器及其制造方法
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Application No.: US12641010Application Date: 2009-12-17
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Publication No.: US08193022B2Publication Date: 2012-06-05
- Inventor: Mun Hwan Kim
- Applicant: Mun Hwan Kim
- Applicant Address: KR Seoul
- Assignee: Dongbu Hitek Co., Ltd.
- Current Assignee: Dongbu Hitek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Saliwanchik, Lloyd & Eisenschenk
- Priority: KR10-2008-0134583 20081226
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A back side illumination image sensor according to an embodiment includes: a photosensitive device and a readout circuit on the front side of a first substrate; an interlayer dielectric layer on the front side of the first substrate; a metal line on the interlayer dielectric layer; a pad having a step on the interlayer dielectric layer; and a second substrate bonded with the front side of the first substrate over the interlayer dielectric layer, metal line, and pad.
Public/Granted literature
- US20100164041A1 BACK SIDE ILLUMINATON IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2010-07-01
Information query
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