Invention Grant
- Patent Title: Nitride semiconductor and method for manufacturing same
- Patent Title (中): 氮化物半导体及其制造方法
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Application No.: US13167052Application Date: 2011-06-23
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Publication No.: US08193021B2Publication Date: 2012-06-05
- Inventor: Hideto Sugawara
- Applicant: Hideto Sugawara
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2007-270371 20071017
- Main IPC: H01L33/02
- IPC: H01L33/02
Abstract:
A nitride semiconductor includes: a substrate having a major surface including a first crystal polarity surface and a second crystal polarity surface different from the first crystal polarity surface; and a single polarity layer provided above the major surface and having a single crystal polarity.
Public/Granted literature
- US20110250714A1 NITRIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING SAME Public/Granted day:2011-10-13
Information query
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