Invention Grant
- Patent Title: Single step current collector deposition process for energy storage devices
- Patent Title (中): 储能装置的单级集电器沉积工艺
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Application No.: US12426084Application Date: 2009-04-17
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Publication No.: US08192788B1Publication Date: 2012-06-05
- Inventor: Nirav S. Shah , Murali Ramasubramanian
- Applicant: Nirav S. Shah , Murali Ramasubramanian
- Applicant Address: US CA Fremont
- Assignee: Enovix Corporation
- Current Assignee: Enovix Corporation
- Current Assignee Address: US CA Fremont
- Agency: Bryan Cave LLP
- Main IPC: B05D5/12
- IPC: B05D5/12
Abstract:
The present invention is directed to methods of forming current collectors of an energy storage device. The current collectors can be formed either before forming the anode/cathode, or after forming the anode/cathode. In one embodiment, a current collector material is simultaneously deposited on an anode support structure and a cathode support structure to form an anode current collector and a cathode current collector. In another embodiment, a current collector material is simultaneously deposited on an anode and a cathode to form an anode current collector and a cathode current collector.
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