Invention Grant
- Patent Title: Tin-doped indium oxide thin films and method for making same
- Patent Title (中): 锡掺杂氧化铟薄膜及其制造方法
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Application No.: US12778183Application Date: 2010-05-12
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Publication No.: US08192652B2Publication Date: 2012-06-05
- Inventor: Chu-Chi Ting , Chia-Hao Tsai , Hsiang-Chen Wang
- Applicant: Chu-Chi Ting , Chia-Hao Tsai , Hsiang-Chen Wang
- Applicant Address: TW Minhsiung Township, Chiayi County
- Assignee: National Chung Cheng University
- Current Assignee: National Chung Cheng University
- Current Assignee Address: TW Minhsiung Township, Chiayi County
- Agency: Frenkel & Associates, PC
- Main IPC: H01B1/08
- IPC: H01B1/08 ; B05D5/12 ; C23C14/34
Abstract:
The tin-doped indium oxide thin film in accordance with the present invention has a tin-doped indium oxide, yttrium ions and europium ions, wherein the yttrium ions are proportional to 0.1-10 mol % of the tin-doped indium oxide while the europium ions proportional to 0.05-5 mol % of the tin-doped indium oxide. The method in accordance with the present invention comprises preparing a tin-doped indium oxide; and doping yttrium ions proportional to 0.1-10 mol % of the tin-doped indium and europium ions proportional to 0.05-5 mol % of the tin-doped indium oxide in the tin-doped indium oxide using a film-manufacturing method.
Public/Granted literature
- US20110278510A1 Tin-Doped Indium Oxide Thin Films And Method For Making Same Public/Granted day:2011-11-17
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