Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US12232786Application Date: 2008-09-24
-
Publication No.: US08174117B2Publication Date: 2012-05-08
- Inventor: Kiminori Ishido
- Applicant: Kiminori Ishido
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2007-266808 20071012
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
Provided is a semiconductor device having a substrate, a semiconductor chip flip-chip mounted on the substrate, and a stacked film provided in a gap between the substrate and the semiconductor chip. The stacked film is composed of a protective film covering the surface of the substrate, and an underfill film formed between the solder resist film and the semiconductor chip. The protective film is roughened on the contact surface brought into contacting said underfill film.
Public/Granted literature
- US20090096095A1 Semiconductor device and method of manufacturing the same Public/Granted day:2009-04-16
Information query
IPC分类:
