Invention Grant
US08174084B2 Stress sensor for in-situ measurement of package-induced stress in semiconductor devices
有权
用于在半导体器件中原位测量封装引起的应力的应力传感器
- Patent Title: Stress sensor for in-situ measurement of package-induced stress in semiconductor devices
- Patent Title (中): 用于在半导体器件中原位测量封装引起的应力的应力传感器
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Application No.: US11523835Application Date: 2006-09-19
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Publication No.: US08174084B2Publication Date: 2012-05-08
- Inventor: Mohammad M. Farahani , Vladimir Noveski , Neha M. Patel , Nachiket R. Raravikar
- Applicant: Mohammad M. Farahani , Vladimir Noveski , Neha M. Patel , Nachiket R. Raravikar
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L29/84
- IPC: H01L29/84
Abstract:
A stress sensor is disclosed herein. The stress sensor includes a plurality of carbon nanotubes in a substrate, and first and second contacts electrically connectable with the plurality of carbon nanotubes. Methods of making and using the stress sensor are also disclosed.
Public/Granted literature
- US20080067619A1 Stress sensor for in-situ measurement of package-induced stress in semiconductor devices Public/Granted day:2008-03-20
Information query
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