Invention Grant
- Patent Title: Semiconductor light emitting device and method for manufacturing same
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US12575778Application Date: 2009-10-08
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Publication No.: US08174027B2Publication Date: 2012-05-08
- Inventor: Akihiro Kojima , Yoshiaki Sugizaki
- Applicant: Akihiro Kojima , Yoshiaki Sugizaki
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-065646 20090318
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L29/26 ; H01L31/12 ; H01L33/00 ; H01L23/04

Abstract:
A semiconductor light emitting device, includes: a substrate including a first major surface and a second major surface, the first major surface including a recess and a protrusion, the second major surface being formed on a side opposite to the first major surface; a first electrode provided on the first major surface; a semiconductor light emitting element provided on the first electrode and electrically connected to the first electrode; a second electrode provided on the second major surface; and a through-electrode provided to pass through the substrate at the recess and electrically connect the first electrode and the second electrode.
Public/Granted literature
- US20100237368A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2010-09-23
Information query
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