Invention Grant
- Patent Title: Flash memory system having encrypted error correction code and encryption method for flash memory system
- Patent Title (中): 闪存系统具有加密的纠错码和闪存系统的加密方法
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Application No.: US12187427Application Date: 2008-08-07
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Publication No.: US08171378B2Publication Date: 2012-05-01
- Inventor: Sung-Up Choi , Yun-Tae Lee , Sung-Man Hwang
- Applicant: Sung-Up Choi , Yun-Tae Lee , Sung-Man Hwang
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2007-0079103 20070807
- Main IPC: G06F11/00
- IPC: G06F11/00

Abstract:
A flash memory system includes a flash memory for storing input data, and a memory controller controlling the flash memory, wherein the memory controller generates a first error correction code corresponding to the input data, and encrypts the first error correction code, and the flash memory includes a main area for storing the input data and a spare area for storing the encrypted first error correction code.
Public/Granted literature
- US20090044077A1 FLASH MEMORY SYSTEM HAVING ENCRYPTED ERROR CORRECTION CODE AND ENCRYPTION METHOD FOR FLASH MEMORY SYSTEM Public/Granted day:2009-02-12
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