Invention Grant
US08171233B2 Multi port semiconductor memory device with direct access function in shared structure of nonvolatile memory and multi processor system thereof 有权
具有非易失性存储器和多处理器系统的共享结构中的直接访问功能的多端口半导体存储器件

  • Patent Title: Multi port semiconductor memory device with direct access function in shared structure of nonvolatile memory and multi processor system thereof
  • Patent Title (中): 具有非易失性存储器和多处理器系统的共享结构中的直接访问功能的多端口半导体存储器件
  • Application No.: US12368739
    Application Date: 2009-02-10
  • Publication No.: US08171233B2
    Publication Date: 2012-05-01
  • Inventor: Jin-Hyung Kwon
  • Applicant: Jin-Hyung Kwon
  • Applicant Address: KR Suwon-Si, Gyeonggi-Do
  • Assignee: Samsung Electronics Co., Ltd.
  • Current Assignee: Samsung Electronics Co., Ltd.
  • Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
  • Agency: F. Chau & Associates, LLC
  • Priority: KR10-2008-0021221 20080307
  • Main IPC: G06F12/00
  • IPC: G06F12/00 G06F15/167
Multi port semiconductor memory device with direct access function in shared structure of nonvolatile memory and multi processor system thereof
Abstract:
A multiport semiconductor memory device and a multiprocessor system employing the same directly accesses a shared nonvolatile memory. The multiport semiconductor memory device includes a plurality of port units coupled with respective corresponding processors. A shared memory area is accessed by both the processors through the port units. A data path control unit controls a data path between the shared memory area and the port units and data transmission/reception is performed between the processors through the shared memory area. An access authority information storage unit is positioned outside of the memory cell array and stores information for an access authority of nonvolatile memory and provides the information to the processors. Accordingly, a direct access is performed by a processor indirectly connected to nonvolatile memory.
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