Invention Grant
- Patent Title: In-situ design method and system for improved memory yield
- Patent Title (中): 提高记忆产量的原位设计方法和系统
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Application No.: US12324170Application Date: 2008-11-26
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Publication No.: US08170857B2Publication Date: 2012-05-01
- Inventor: Rajiv V. Joshi , Rouwaida Kanj
- Applicant: Rajiv V. Joshi , Rouwaida Kanj
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Preston J. Young, Esq.
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A system and method for designing integrated circuits includes determining a target memory module for evaluation and improvement by evaluating performance variables of the memory module. The performance variables are statistically simulated over subset combinations of variables based on pin information for the module. Sensitivities of performance on yield to the variables in the subset combinations are determined. It is then determined whether yield of the target module is acceptable, and if the yield is not acceptable, a design which includes the target module is adjusted in accordance with the sensitivities to adjust the yield.
Public/Granted literature
- US20100131259A1 IN-SITU DESIGN METHOD AND SYSTEM FOR IMPROVED MEMORY YIELD Public/Granted day:2010-05-27
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