Invention Grant
US08169821B1 Low-crystallization temperature MTJ for spin-transfer torque magnetic random access memory (SSTTMRAM)
有权
自旋转移磁力随机存取存储器（SSTTMRAM）的低结晶温度MTJ
- Patent Title: Low-crystallization temperature MTJ for spin-transfer torque magnetic random access memory (SSTTMRAM)
- Patent Title (中): 自旋转移磁力随机存取存储器（SSTTMRAM）的低结晶温度MTJ
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Application No.: US12907913Application Date: 2010-10-19
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Publication No.: US08169821B1Publication Date: 2012-05-01
- Inventor: Rajiv Yadav Ranjan , Roger Klas Malmhall
- Applicant: Rajiv Yadav Ranjan , Roger Klas Malmhall
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: IPxLaw Group LLP
- Agent Maryam Imam
- Main IPC: G11C11/14
- IPC: G11C11/14
Abstract:
A spin-torque transfer memory random access memory (STTMRAM) element is disclosed and has a fixed layer, a barrier layer formed upon the fixed layer, and a free layer comprised of a low-crystallization temperature alloy of CoFeB—Z where Z is below 25 atomic percent of one or more of titanium, (Ti), yittrium (Y), zirconium (Zr), and vanadium (V), wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the magnetization of the free layer between parallel and anti-parallel states relative to the magnetization of the fixed layer.
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