Invention Grant
- Patent Title: Method for manufacturing a magneto-resistance effect element having spacer layer
- Patent Title (中): 具有间隔层的磁阻效应元件的制造方法
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Application No.: US11822545Application Date: 2007-07-06
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Publication No.: US08169752B2Publication Date: 2012-05-01
- Inventor: Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji
- Applicant: Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Nixon & Vanderhye, P.C.
- Priority: JPP2006-188712 20060707
- Main IPC: G11B5/33
- IPC: G11B5/33

Abstract:
In a method for manufacturing a magneto-resistance effect element having a pinned magnetic layer of which a magnetization is fixed substantially in one direction, a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and a spacer layer, which is located between the fixed magnetization layer and the free magnetization layer, with an insulating layer and a metallic layer penetrating through the insulating layer, the spacer layer is formed by forming a first metallic layer; forming, on the first metallic layer, a second metallic layer to be converted into a portion of the insulating layer; performing a first conversion treatment so as to convert the second metallic layer into the portion of said insulating layer and to form a portion of the metallic layer penetrating through the insulating layer; forming, on the insulating layer and the metallic layer formed through the first conversion treatment, a third metallic layer to be converted into the other portion of the insulating layer; and performing a second conversion treatment so as to convert the third metallic layer into the other portion of the insulating and to form the other portion of the metallic layer penetrating through the insulating layer.
Public/Granted literature
- US20080102315A1 Method for manufacturing a magneto-resistance effect element, and magneto-resistance effect element Public/Granted day:2008-05-01
Information query
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