Invention Grant
US08169577B2 Thin-film transistor photosensor, liquid crystal display panel and method of forming dielectric layer having F-SiOC: H compound 有权
薄膜晶体管光电传感器,液晶显示面板和形成具有F-SiOC:H化合物的介电层的方法

  • Patent Title: Thin-film transistor photosensor, liquid crystal display panel and method of forming dielectric layer having F-SiOC: H compound
  • Patent Title (中): 薄膜晶体管光电传感器,液晶显示面板和形成具有F-SiOC:H化合物的介电层的方法
  • Application No.: US12581158
    Application Date: 2009-10-18
  • Publication No.: US08169577B2
    Publication Date: 2012-05-01
  • Inventor: Cho-Yu Li
  • Applicant: Cho-Yu Li
  • Applicant Address: TW Bade, Taoyuan
  • Assignee: Chunghwa Picture Tubes, Ltd.
  • Current Assignee: Chunghwa Picture Tubes, Ltd.
  • Current Assignee Address: TW Bade, Taoyuan
  • Agent Winston Hsu; Scott Margo
  • Priority: TW98123873A 20090715
  • Main IPC: G02F1/1337
  • IPC: G02F1/1337 H01L31/00 H01L27/14 H01L21/469
Thin-film transistor photosensor, liquid crystal display panel and method of forming dielectric layer having F-SiOC: H compound
Abstract:
A thin-film transistor photosensor and a liquid crystal display (LCD) panel respectively utilize a dielectric layer having F—SiOC: H compound and a bump structure having F—SiOC: H compound so as to form a thin-film transistor photosensor having lower resistor-capacitor loading (RC loading) and an LCD panel having low-dielectric F—SiOC: H compound respectively. In addition, a method of forming a dielectric layer having F—SiOC: H compound utilizes gases including trimethyl silane, carbon tetrafluoride, argon, and oxygen for thin-film deposition process so as to form a low-k F—SiOC: H compound dielectric layer.
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