Invention Grant
US08169577B2 Thin-film transistor photosensor, liquid crystal display panel and method of forming dielectric layer having F-SiOC: H compound
有权
薄膜晶体管光电传感器,液晶显示面板和形成具有F-SiOC:H化合物的介电层的方法
- Patent Title: Thin-film transistor photosensor, liquid crystal display panel and method of forming dielectric layer having F-SiOC: H compound
- Patent Title (中): 薄膜晶体管光电传感器,液晶显示面板和形成具有F-SiOC:H化合物的介电层的方法
-
Application No.: US12581158Application Date: 2009-10-18
-
Publication No.: US08169577B2Publication Date: 2012-05-01
- Inventor: Cho-Yu Li
- Applicant: Cho-Yu Li
- Applicant Address: TW Bade, Taoyuan
- Assignee: Chunghwa Picture Tubes, Ltd.
- Current Assignee: Chunghwa Picture Tubes, Ltd.
- Current Assignee Address: TW Bade, Taoyuan
- Agent Winston Hsu; Scott Margo
- Priority: TW98123873A 20090715
- Main IPC: G02F1/1337
- IPC: G02F1/1337 ; H01L31/00 ; H01L27/14 ; H01L21/469

Abstract:
A thin-film transistor photosensor and a liquid crystal display (LCD) panel respectively utilize a dielectric layer having F—SiOC: H compound and a bump structure having F—SiOC: H compound so as to form a thin-film transistor photosensor having lower resistor-capacitor loading (RC loading) and an LCD panel having low-dielectric F—SiOC: H compound respectively. In addition, a method of forming a dielectric layer having F—SiOC: H compound utilizes gases including trimethyl silane, carbon tetrafluoride, argon, and oxygen for thin-film deposition process so as to form a low-k F—SiOC: H compound dielectric layer.
Public/Granted literature
Information query
IPC分类: