Invention Grant
- Patent Title: Programming of DIMM termination resistance values
- Patent Title (中): 对DIMM终端电阻值进行编程
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Application No.: US12797557Application Date: 2010-06-09
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Publication No.: US08169233B2Publication Date: 2012-05-01
- Inventor: Philip Arnold Ferolito , Daniel L. Rosenband , David T. Wang , Michael John Sebastian Smith
- Applicant: Philip Arnold Ferolito , Daniel L. Rosenband , David T. Wang , Michael John Sebastian Smith
- Applicant Address: US CA Mountain View
- Assignee: Google Inc.
- Current Assignee: Google Inc.
- Current Assignee Address: US CA Mountain View
- Agency: Fish & Richardson P.C.
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H03K19/003 ; G11C11/00

Abstract:
Systems, methods, and apparatus, including computer program products, for providing termination resistance in a memory module are provided. An apparatus is provided that includes a plurality of memory circuits; an interface circuit operable to communicate with the plurality of memory circuits and to communicate with a memory controller; and a transmission line electrically coupling the interface circuit to a memory controller, wherein the interface circuit is operable to terminate the transmission line with a single termination resistance that is selected based on a plurality of resistance-setting commands received from the memory controller.
Public/Granted literature
- US20110095783A1 PROGRAMMING OF DIMM TERMINATION RESISTANCE VALUES Public/Granted day:2011-04-28
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