Invention Grant
- Patent Title: Capacitive isolator
- Patent Title (中): 电容隔离器
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Application No.: US12060049Application Date: 2008-03-31
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Publication No.: US08169108B2Publication Date: 2012-05-01
- Inventor: Timothy Dupuis , Axel Thomsen , Zhiwei Dong , Ka Y. Leung
- Applicant: Timothy Dupuis , Axel Thomsen , Zhiwei Dong , Ka Y. Leung
- Applicant Address: US TX Austin
- Assignee: Silicon Laboratories Inc.
- Current Assignee: Silicon Laboratories Inc.
- Current Assignee Address: US TX Austin
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: H04B1/18
- IPC: H04B1/18

Abstract:
An integrated circuit provides high voltage isolation capabilities. The circuit includes a first area containing a first group of functional circuitry located in a substrate of the integrated circuit. This circuit also includes a second area containing a second group of functional circuitry also contained within the substrate of the integrated circuit. Capacitive isolation circuitry located in the conductive layers in the integrated circuit provide a high voltage isolation link between the first group of functional circuitry and the second group of functional circuitry. The capacitive isolation circuitry distributes a first portion of the high voltage isolation signal across the first group of capacitors in the capacitive isolation circuitry and distributes a second portion of the high voltage isolation circuitry across the second group of capacitors in the capacitive isolation circuitry.
Public/Granted literature
- US20090017773A1 CAPACITIVE ISOLATOR Public/Granted day:2009-01-15
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