Invention Grant
- Patent Title: Strained CMOS device, circuit and method of fabrication
- Patent Title (中): 应变CMOS器件，电路和制造方法
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Application No.: US12689339Application Date: 2010-01-19
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Publication No.: US08169025B2Publication Date: 2012-05-01
- Inventor: Stephen W. Bedell , Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Devendra K. Sadana , Ghavam G. Shahidi
- Applicant: Stephen W. Bedell , Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Devendra K. Sadana , Ghavam G. Shahidi
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L27/12
- IPC: H01L27/12
Abstract:
A semiconductor device and fabrication method include a strained semiconductor layer having a strain in one axis. A long fin and a short fin are formed in the semiconductor layer such that the long fin has a strained length along the one axis. An n-type transistor is formed on the long fin, and a p-type transistor is formed on the at least one short fin. The strain in the n-type transistor improves performance.
Public/Granted literature
- US20110175166A1 STRAINED CMOS DEVICE, CIRCUIT AND METHOD OF FABRICATION Public/Granted day:2011-07-21
Information query
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