Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12494885Application Date: 2009-06-30
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Publication No.: US08169009B2Publication Date: 2012-05-01
- Inventor: Satoshi Inaba
- Applicant: Satoshi Inaba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-199453 20080801
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A semiconductor device includes N fins made of semiconductor regions aligned in parallel with each other in the top view plain, a gate electrode formed on both side surfaces of each of the N fins to cross the fins, source/drain layers formed in each of the N fins by sandwiching the gate electrode, a first wiring connected to one of the source/drain layers via a first contact formed in each of M fins, and a second wiring connected to the other one of the source/drain layers via a second contact formed in each of K fins.
Public/Granted literature
- US20100025767A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-02-04
Information query
IPC分类:
