Invention Grant
- Patent Title: Semiconductor module including a switch and non-central diode
- Patent Title (中): 半导体模块包括开关和非中心二极管
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Application No.: US12543779Application Date: 2009-08-19
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Publication No.: US08168985B2Publication Date: 2012-05-01
- Inventor: Kiyoshi Arai , Gourab Majumdar
- Applicant: Kiyoshi Arai , Gourab Majumdar
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-302225 20081127
- Main IPC: H01L25/07
- IPC: H01L25/07 ; H01L25/18 ; H01L29/12
Abstract:
A semiconductor module having one or more silicon carbide diode elements mounted on a switching element is provided in which the temperature rise is reduced by properly disposing each of the diode elements on the switching element, to thereby provide a thermal dissipation path for the respective diode elements. The respective diode elements are arranged on a non-central portion of the switching element, to facilitate dissipation of the heat produced by each of the diode elements, whereby the temperature rise in the semiconductor module is reduced.
Public/Granted literature
- US20100127277A1 SEMICONDUCTOR MODULE Public/Granted day:2010-05-27
Information query
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