Invention Grant
US08168982B2 Substrate for electro-optical device with light shielding section having various widths, electro-optical device, and electronic apparatus 有权
具有各种宽度的遮光部的电光装置的基板,电光装置和电子装置

  • Patent Title: Substrate for electro-optical device with light shielding section having various widths, electro-optical device, and electronic apparatus
  • Patent Title (中): 具有各种宽度的遮光部的电光装置的基板,电光装置和电子装置
  • Application No.: US12567268
    Application Date: 2009-09-25
  • Publication No.: US08168982B2
    Publication Date: 2012-05-01
  • Inventor: Tatsuya Ishii
  • Applicant: Tatsuya Ishii
  • Applicant Address: JP Tokyo
  • Assignee: Seiko Epson Corporation
  • Current Assignee: Seiko Epson Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Oliff & Berridge, PLC
  • Priority: JP2006-200896 20060724
  • Main IPC: H01L29/06
  • IPC: H01L29/06
Substrate for electro-optical device with light shielding section having various widths, electro-optical device, and electronic apparatus
Abstract:
Disclosed is a substrate for an electro-optical device including: a substrate; a plurality of data lines and a plurality of scanning lines which intersect with other on the substrate; a pixel electrode formed in each of a plurality of pixels which configure a display region on the substrate and are defined in correspondence with intersections between the plurality of data lines and the plurality of scanning lines; a transistor provided in each of non-opening regions which discriminate between opening regions of the plurality of pixels and including a semiconductor layer including a channel region having a channel length in one direction of the display region, a data line side source/drain region electrically connected to the data line, a pixel electrode side source/drain region electrically connected to the pixel electrode, a first junction region formed between the channel region and the data line side source/drain region, and a second junction region formed between the channel region and the pixel electrode side source/drain region; and a light-shielding section which is formed above each of the semiconductor layers, extends along the one direction, and includes a first portion which covers the first junction region and a second portion which covers the second junction region and has a width larger than that of the first portion in a direction intersecting the one direction.
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