Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12473703Application Date: 2009-05-28
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Publication No.: US08168975B2Publication Date: 2012-05-01
- Inventor: Jun Koyama , Hisashi Ohtani , Yasushi Ogata , Shunpei Yamazaki
- Applicant: Jun Koyama , Hisashi Ohtani , Yasushi Ogata , Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP08-358956 19961230
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L31/0376 ; H01L31/20 ; H01L31/036

Abstract:
A wiring line is electrically connected in parallel to an auxiliary wiring line via a plurality of contact holes. The contact holes are formed through an insulating film and arranged in vertical direction to the wiring line. Since the auxiliary wiring line is formed in the same layer as an electrode that constitutes a TFT, the electric resistance of the wiring line can be reduced effectively without increasing the number of manufacturing steps.
Public/Granted literature
- US20090231533A1 Semiconductor Device and Manufacturing Method Thereof Public/Granted day:2009-09-17
Information query
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