A method for simultaneous recrystallization and doping of semiconductor layers, in particular for the production of crystalline silicon thin layer solar cells. A substrate base layer 1 is produced, and subsequently, an intermediate layer system 2 which has at least one doped partial layer is deposited on the base layer. An absorber layer 3 which is undoped or likewise doped is deposited on the intermediate layer system 2, and in a recrystallisation step, the absorber layer 3 is heated, melted, cooled and tempered. Alternately, instead of an undoped capping layer, a capping layer system 4 which has at least one partial layer can also be applied on the absorber layer 3.