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US08168966B2 GaN-based semiconductor light-emitting device, light illuminator, image display planar light source device, and liquid crystal display assembly 有权
GaN系半导体发光装置，光照射装置，图像显示面板光源装置以及液晶显示装置

  • Patent Title: GaN-based semiconductor light-emitting device, light illuminator, image display planar light source device, and liquid crystal display assembly
  • Patent Title (中): GaN系半导体发光装置，光照射装置，图像显示面板光源装置以及液晶显示装置
  • Application No.: US11718862
    Application Date: 2006-09-08
  • Publication No.: US08168966B2
    Publication Date: 2012-05-01
  • Inventor: Goshi Biwa , Hiroyuki Okuyama
  • Applicant: Goshi Biwa , Hiroyuki Okuyama
  • Applicant Address: JP Tokyo
  • Assignee: Sony Corporation
  • Current Assignee: Sony Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: K&L Gates LLP
  • Priority: JP2005-264938 20050913; JP2006-234199 20060830
  • International Application: PCT/JP2006/017881 WO 20060908
  • International Announcement: WO2007/032281 WO 20070322
  • Main IPC: H01L29/15
  • IPC: H01L29/15
GaN-based semiconductor light-emitting device, light illuminator, image display planar light source device, and liquid crystal display assembly
Abstract:
A GaN-based semiconductor light-emitting device includes (A) a first GaN-based compound semiconductor layer 13 having n-type conductivity, (B) an active layer 15 having a multi-quantum well structure including well layers and barrier layers for separating between the well layers, and (C) a second GaN-based compound semiconductor layer 17 having p-type conductivity. The well layers are disposed in the active layer 15 so as to satisfy the relation d1
Abstract(Chinese):

GaN基半导体发光器件包括（A）具有n型导电性的第一GaN基化合物半导体层13，（B）具有多量子阱结构的有源层15，其包括阱层和用于分离的势垒层 （C）具有p型导电性的第二GaN基化合物半导体层17。 阱层设置在有源层15中，以满足关系d1

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02 .按其半导体本体的特征区分的
H01L29/12 ..按其构成材料的特征区分的
H01L29/15 ... · ·带有周期性或准周期性电势变化的结构，如多量子阱、超晶格（应用于光控制的这种结构入G02F1/017；应用于半导体激光器的入H01S5/34）
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