Invention Grant
- Patent Title: Method for forming image sensor with shield structures
- Patent Title (中): 用屏蔽结构形成图像传感器的方法
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Application No.: US13227376Application Date: 2011-09-07
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Publication No.: US08168933B2Publication Date: 2012-05-01
- Inventor: Jeong Soo Byun , Vladimir Korobov , Oliver Pohland
- Applicant: Jeong Soo Byun , Vladimir Korobov , Oliver Pohland
- Applicant Address: BM Hamilton
- Assignee: ON Semiconductor Trading, Ltd.
- Current Assignee: ON Semiconductor Trading, Ltd.
- Current Assignee Address: BM Hamilton
- Agent Kevin B. Jackson
- Main IPC: H01L27/00
- IPC: H01L27/00

Abstract:
An image sensor having shield structures and methods of forming the same are provided. Generally, the image sensor includes: (i) substrate having at least one photosensitive element formed therein; (ii) a dielectric layer overlying the substrate and the photosensitive element; and (iii) an annular reflective waveguide disposed in the dielectric layer above the photosensitive element to reduce cross-talk between adjacent elements of the sensor while increasing sensitivity of the sensor. In certain embodiments, the sensor further includes a photoshield disposed in the dielectric above the photosensitive element and about the waveguide to further reduce the possibility of cross-talk. Other embodiments are also disclosed.
Public/Granted literature
- US20120003782A1 METHOD FOR FORMING IMAGE SENSOR WITH SHIELD STRUCTURES Public/Granted day:2012-01-05
Information query
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