Methods of forming tubular objects

Invention Grant

US08168542B2 Methods of forming tubular objects 有权

Title translation: 形成管状物体的方法

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Patent Title: Methods of forming tubular objects
Patent Title (中): 形成管状物体的方法
Application No.: US11968771

Application Date: 2008-01-03
Publication No.: US08168542B2

Publication Date: 2012-05-01
Inventor: Kuan-Neng Chen , John Christopher Arnold , Niranjana Ruiz
Applicant: Kuan-Neng Chen , John Christopher Arnold , Niranjana Ruiz
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Ryan, Mason & Lewis, LLP
Agent Vazken Alexanian
Main IPC: H01L21/311
IPC: H01L21/311

Abstract:

A tubular object is fabricated by a method comprising the steps of providing a first layer, forming a second layer on the first layer, and then patterning the second layer to form a raised feature with one or more sidewalls. Subsequently, the first layer is processed such that components of the first layer deposit on the one or more sidewalls of the raised feature.

Abstract(Chinese):

通过包括以下步骤的方法制造管状物体，所述方法包括提供第一层，在第一层上形成第二层，然后图案化第二层以形成具有一个或多个侧壁的凸起特征。随后，处理第一层，使得第一层的组分沉积在凸起特征的一个或多个侧壁上。

Public/Granted literature

US20090176040A1 Methods of Forming Tubular Objects Public/Granted day:2009-07-09

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀