A method for making a semiconductor device (10) includes providing an interconnect layer (14) over an underlying layer (12), forming a first insulating layer (16) over the interconnect layer, and forming an opening (18) through the insulating layer to the interconnect layer. A first conductive layer (24) is formed over the interconnect layer and in the opening. This is performed by plating so it is selective. A second conductive layer (28) in the opening is formed by displacement by immersion. This is performed after the first conductive layer has been formed. The result is the second conductive layer is formed by a selective deposition and is effective for providing it with bridging material. A layer of bridgeable material (34) is formed over the second conductive layer and in the opening. A third conductive layer (42) is formed over the bridgeable material. The semiconductor device may be useable as a conductive bridge memory device.