Invention Grant
US08168460B2 Method for manufacturing group III nitride compound semiconductor light-emitting device, group III nitride compound semiconductor light-emitting device, and lamp
有权
制造III族氮化物化合物半导体发光元件，III族氮化物化合物半导体发光元件和灯的方法
- Patent Title: Method for manufacturing group III nitride compound semiconductor light-emitting device, group III nitride compound semiconductor light-emitting device, and lamp
- Patent Title (中): 制造III族氮化物化合物半导体发光元件，III族氮化物化合物半导体发光元件和灯的方法
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Application No.: US12519987Application Date: 2007-12-18
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Publication No.: US08168460B2Publication Date: 2012-05-01
- Inventor: Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki
- Applicant: Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki
- Applicant Address: JP Tokyo
- Assignee: Showa Denko K.K.
- Current Assignee: Showa Denko K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-343020 20061220
- International Application: PCT/JP2007/074311 WO 20071218
- International Announcement: WO2008/075679 WO 20080626
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method for manufacturing a Group III nitride semiconductor light-emitting device according to the present invention, comprising forming, on a substrate, a semiconductor layer comprised of a Group III nitride compound semiconductor containing Ga as a Group III element by a sputtering method, wherein during the formation of the semiconductor layer, sputtering is performed under the condition where at least the surface layer of a sputtering target comprised of Ga is liquefied.
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