Invention Grant
- Patent Title: Method for manufacturing light emitting diode
- Patent Title (中): 制造发光二极管的方法
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Application No.: US12557023Application Date: 2009-09-10
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Publication No.: US08168455B2Publication Date: 2012-05-01
- Inventor: Cheng-yi Liu , Yung-Hsun Lin
- Applicant: Cheng-yi Liu , Yung-Hsun Lin
- Priority: TW98105528A 20090220
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for manufacturing light emitting diode (LED) is revealed. By means of wet etching, a plurality of pyramids is formed on epitaxial structure. The depth of the pyramids is beyond a n-type semiconductor layer, reaching a p-type semiconductor layer. Thus light emitting directions of the LED made by the method of the present invention are increased. Therefore, the light emitting efficiency of LED is improved.
Public/Granted literature
- US20100216270A1 METHOD FOR MANUFACTURING LIGHT EMITTING DIODE Public/Granted day:2010-08-26
Information query
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