Invention Grant
- Patent Title: Pattern forming method and method of manufacturing semiconductor device by using the same
- Patent Title (中): 使用该半导体器件的图案形成方法及其制造方法
-
Application No.: US12391679Application Date: 2009-02-24
-
Publication No.: US08168377B2Publication Date: 2012-05-01
- Inventor: Kazuyuki Mitsuoka , Makoto Muramatsu , Mitsuaki Iwashita
- Applicant: Kazuyuki Mitsuoka , Makoto Muramatsu , Mitsuaki Iwashita
- Applicant Address: JP
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP
- Agency: Cantor Colburn LLP
- Priority: JP2008-048611 20080228
- Main IPC: G03F7/11
- IPC: G03F7/11 ; G03F7/16 ; G03F7/38 ; G03F7/40 ; B05D3/10 ; B06D5/12 ; H01L21/308
Abstract:
The pattern forming method includes forming a catalyst film on a base layer having an uneven surface, wherein the catalyst layer is formed along the uneven surface of the base layer; forming a coating film by coating a fluid material on the catalyst film; forming an insoluble layer which is insoluble in a solvent in the coating film by reacting the coating film along the catalyst film; and maintaining the insoluble layer by removing an unreacted portion of the coating film by using the solvent.
Public/Granted literature
- US20090220898A1 PATTERN FORMING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME Public/Granted day:2009-09-03
Information query
IPC分类:
