Invention Grant
US08168351B2 Method for inspecting photomask blank or intermediate thereof, method for determining dosage of high-energy radiation, and method for manufacturing photomask blank
有权
检查光掩模坯料或其中间体的方法，用于确定高能辐射剂量的方法，以及制造光掩模坯料的方法
- Patent Title: Method for inspecting photomask blank or intermediate thereof, method for determining dosage of high-energy radiation, and method for manufacturing photomask blank
- Patent Title (中): 检查光掩模坯料或其中间体的方法，用于确定高能辐射剂量的方法，以及制造光掩模坯料的方法
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Application No.: US12750121Application Date: 2010-03-30
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Publication No.: US08168351B2Publication Date: 2012-05-01
- Inventor: Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa
- Applicant: Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2009-086185 20090331
- Main IPC: G03F1/00
- IPC: G03F1/00 ; G06K9/00
Abstract:
A photomask blank which is manufactured by depositing a phase shift film on a substrate and irradiating the phase shift film with high-energy radiation to effect substrate shape adjusting treatment is inspected by measuring a surface topography of the photomask blank after the substrate shape adjusting treatment, removing the phase shift film from the photomask blank, measuring a surface topography of the treated substrate after removal of the phase shift film, and comparing the surface topographies, thereby evaluating a warpage change before and after removal of the phase shift film, due to a stress of the phase shift film having undergone substrate shape adjusting treatment.
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