Invention Grant
US08168256B2 Formation of selenide, sulfide or mixed selenide-sulfide films on metal or metal coated substrates
有权
在金属或金属涂层的基材上形成硒化物，硫化物或混合的硒化物 - 硫化物膜
- Patent Title: Formation of selenide, sulfide or mixed selenide-sulfide films on metal or metal coated substrates
- Patent Title (中): 在金属或金属涂层的基材上形成硒化物，硫化物或混合的硒化物 - 硫化物膜
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Application No.: US11577777Application Date: 2005-10-21
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Publication No.: US08168256B2Publication Date: 2012-05-01
- Inventor: Erten Eser , Shannon Fields
- Applicant: Erten Eser , Shannon Fields
- Applicant Address: US DE Newark
- Assignee: Erten Eser
- Current Assignee: Erten Eser
- Current Assignee Address: US DE Newark
- Agency: RatnerPrestia
- International Application: PCT/US2005/037711 WO 20051021
- International Announcement: WO2006/047207 WO 20060504
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C16/06
Abstract:
A process and composition for preventing cracking in composite structures comprising a metal coated substrate and a selenide, sulfide or mixed selenide sulfide film. Specifically, cracking is prevented in the coating of molybdenum coated substrates upon which a copper, indium-gallium diselenide (CIGS) film is deposited. Cracking is inhibited by adding a Se passivating amount of oxygen to the Mo and limiting the amount of Se deposited on the Mo coating.
Public/Granted literature
- US20090017207A1 Formation of Selenide, Sulfide or Mixed Selenide-Sulfide Films on Metal or Metal Coated Substrates Public/Granted day:2009-01-15
Information query
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