Invention Grant
- Patent Title: Substrate transfer apparatus and vertical heat processing apparatus
- Patent Title (中): 基板转印装置和立式热处理装置
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Application No.: US12225920Application Date: 2007-04-23
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Publication No.: US08167521B2Publication Date: 2012-05-01
- Inventor: Ken Nakao , Hitoshi Kato , Junichi Hagihara
- Applicant: Ken Nakao , Hitoshi Kato , Junichi Hagihara
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2006-130492 20060509; JP2007-007220 20070116
- International Application: PCT/JP2007/058702 WO 20070423
- International Announcement: WO2007/129558 WO 20071115
- Main IPC: H01L21/677
- IPC: H01L21/677

Abstract:
The present invention restrains, during a transfer of a substrate, a central portion of the substrate from being warped by its own weight, which might be caused by a super-enlargement of a diameter of the substrate. A substrate transfer apparatus 18 includes: a support part 17 which is moved above a substrate w of a large diameter; and an upside grip mechanism 28 disposed on the support part 17, the upside grip mechanism 28 capable of supporting a peripheral portion of the substrate w from above. The support part 17 is provided with a non-contact sucking and holding part 30 having a suction hole 31 and a blow hole 32. The non-contact sucking and holding part 30 sucks and holds the substrate w in a non-contact manner, by blowing a gas onto the central portion of the upper surface of the substrate w and sucking the central portion to form an air layer 50 such that the central portion of the wafer w is not warped.
Public/Granted literature
- US20090175705A1 SUBSTRATE TRANSFER APPARATUS AND VERTICAL HEAT PROCESSING APPARATUS Public/Granted day:2009-07-09
Information query
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