Invention Grant
- Patent Title: Random read/write performance of probe storage memory devices
- Patent Title (中): 探头存储设备的随机读/写性能
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Application No.: US12650583Application Date: 2009-12-31
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Publication No.: US08149680B2Publication Date: 2012-04-03
- Inventor: Valluri R. Rao , Sanjay Rangan
- Applicant: Valluri R. Rao , Sanjay Rangan
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Kevin A. Reif
- Main IPC: G11B7/00
- IPC: G11B7/00

Abstract:
Current probe-type memory architecture assumes that the minimum chunk of data that a probe tip can access is one entire track and perhaps only four out of five-thousand, for example, probes participate in the access thereby degrading performance. By subdividing the track into D finer chunks or data zones, D times more probes can cooperate to read out the data, hence increasing the data throughput by Dx. Each tip now only scans approximately one Dth of the track and hence the scan time is reduced by a factor D, while D probes are being utilized in parallel.
Public/Granted literature
- US20100226237A1 RANDOM READ/WRITE PERFORMANCE OF PROBE STORAGE MEMORY DEVICES Public/Granted day:2010-09-09
Information query
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