Invention Grant
- Patent Title: Magnetoresistive effect element and thin-film magnetic head with the magnetoresistive effect element
- Patent Title (中): 磁阻效应元件和具有磁阻效应元件的薄膜磁头
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Application No.: US12047722Application Date: 2008-03-13
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Publication No.: US08149547B2Publication Date: 2012-04-03
- Inventor: Naoki Ohta , Satoshi Miura , Tomohito Mizuno
- Applicant: Naoki Ohta , Satoshi Miura , Tomohito Mizuno
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Main IPC: G11B5/33
- IPC: G11B5/33 ; G11B5/127
Abstract:
An MR element includes a pinned layer, a free layer and a nonmagnetic space layer or a tunnel barrier layer sandwiched between the pinned layer and the free layer. A magnetization direction of the free layer is substantially perpendicular to a film surface thereof, and a magnetization direction of the pinned layer is substantially parallel to a film surface thereof.
Public/Granted literature
- US20090231762A1 MAGNETORESISTIVE EFFECT ELEMENT AND THIN-FILM MAGNETIC HEAD WITH THE MAGNETORESISTIVE EFFECT ELEMENT Public/Granted day:2009-09-17
Information query
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