Invention Grant
US08149060B2 Low distortion amplifier and Doherty amplifier using low distortion amplifier
有权
低失真放大器和Doherty放大器采用低失真放大器
- Patent Title: Low distortion amplifier and Doherty amplifier using low distortion amplifier
- Patent Title (中): 低失真放大器和Doherty放大器采用低失真放大器
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Application No.: US12933509Application Date: 2008-03-25
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Publication No.: US08149060B2Publication Date: 2012-04-03
- Inventor: Kazuhisa Yamauchi , Hifumi Noto , Akira Inoue , Tomokazu Hamada , Masatoshi Nakayama , Kenichi Horiguchi
- Applicant: Kazuhisa Yamauchi , Hifumi Noto , Akira Inoue , Tomokazu Hamada , Masatoshi Nakayama , Kenichi Horiguchi
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- International Application: PCT/JP2008/055526 WO 20080325
- International Announcement: WO2009/118824 WO 20091001
- Main IPC: H03F3/68
- IPC: H03F3/68

Abstract:
Provided is a low distortion amplifier which can satisfy both securement of a setting space in a vicinity of a transistor and low impedance. The low distortion amplifier includes a short stub having a leading end thereof short-circuited with a high-frequency short-circuit element and a low-frequency short-circuit element, in which the short stub is connected to a vicinity of at least one of a gate terminal and a drain terminal of the transistor, and includes a plurality of branched lines, the plurality of branched lines each having a leading end thereof short-circuited with the high-frequency short-circuit element and the low-frequency short-circuit element.
Public/Granted literature
- US20110012681A1 LOW DISTORTION AMPLIFIER AND DOHERTY AMPLIFIER USING LOW DISTORTION AMPLIFIER Public/Granted day:2011-01-20
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