Invention Grant
- Patent Title: Solid-state image sensor
- Patent Title (中): 固态图像传感器
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Application No.: US11340571Application Date: 2006-01-27
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Publication No.: US08149051B2Publication Date: 2012-04-03
- Inventor: Yoshinari Ichihashi , Ryu Shimizu , Kazuhiro Sasada
- Applicant: Yoshinari Ichihashi , Ryu Shimizu , Kazuhiro Sasada
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-021396 20050128
- Main IPC: H03F1/32
- IPC: H03F1/32

Abstract:
A solid-state image sensor capable of suppressing color mixture while suppressing increase of load capacitances of transfer gates and a short circuit between two adjacent transfer gates is provided. This solid-state image sensor comprises a plurality of transfer gates and a shielding material line blocking light incident from above a prescribed pixel upon another pixel adjacent to the prescribed pixel. The shielding material line has a downward projecting portion on a region corresponding to at least one transfer gate entering an ON-state in photoreception.
Public/Granted literature
- US20060170007A1 Solid-state image sensor Public/Granted day:2006-08-03
Information query
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