Invention Grant
- Patent Title: Low-dropout regulator
- Patent Title (中): 低压差稳压器
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Application No.: US12859851Application Date: 2010-08-20
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Publication No.: US08148961B2Publication Date: 2012-04-03
- Inventor: Sang Hoon Ha , Sang Hee Kim , Jun Kyung Na , Shinichi Iizuka
- Applicant: Sang Hoon Ha , Sang Hee Kim , Jun Kyung Na , Shinichi Iizuka
- Applicant Address: KR Gyunggi-do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-do
- Agency: Lowe, Hauptman, Ham & Berner, LLP
- Priority: KR10-2009-0130811 20091224
- Main IPC: G05F1/00
- IPC: G05F1/00

Abstract:
A low-dropout regulator includes: a first operational amplifier having a first input receiving an input voltage; a first P-channel MOSFET having a gate connected to an output of the first operational amplifier, a source connected to a power source terminal, and a drain connected to an output terminal; a feedback circuit providing at least portion of a voltage of the output terminal as a feedback to a second input of the first operational amplifier; and a triode limiter circuit receiving voltages at the source and the gate of the first P-channel MOSFET comparing a voltage difference therebetween with a predetermined reference voltage, and increasing a voltage of the second input of the first operational amplifier when the voltage difference is the same as the reference voltage.
Public/Granted literature
- US20110156677A1 LOW-DROPOUT REGULATOR Public/Granted day:2011-06-30
Information query
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