Invention Grant
- Patent Title: Power electronic module IGBT protection method and system
- Patent Title (中): 电力电子模块IGBT保护方法及系统
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Application No.: US12241766Application Date: 2008-09-30
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Publication No.: US08148929B2Publication Date: 2012-04-03
- Inventor: Lixiang Wei , Masahiro Tsuyoshi , Richard A. Lukaszewski
- Applicant: Lixiang Wei , Masahiro Tsuyoshi , Richard A. Lukaszewski
- Applicant Address: US OH Mayfield Heights
- Assignee: Rockwell Automation Technologies, Inc.
- Current Assignee: Rockwell Automation Technologies, Inc.
- Current Assignee Address: US OH Mayfield Heights
- Agency: Fletcher Yoder, P.C.
- Agent Alexander R. Kuszewski; John M. Miller
- Main IPC: H02P6/14
- IPC: H02P6/14
Abstract:
A power electronics device with an improved IGBT protection mechanism is provided. More specifically, systems and methods are provided for reducing the switching frequency of an inverter module based on the junction temperature variation of the IGBT.
Public/Granted literature
- US20100080024A1 POWER ELECTRONIC MODULE IGBT PROTECTION METHOD AND SYSTEM Public/Granted day:2010-04-01
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