Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12468280Application Date: 2009-05-19
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Publication No.: US08148818B2Publication Date: 2012-04-03
- Inventor: Shunpei Yamazaki , Yoshiaki Oikawa , Hironobu Shoji , Yutaka Shionoiri , Kiyoshi Kato , Masataka Nakada
- Applicant: Shunpei Yamazaki , Yoshiaki Oikawa , Hironobu Shoji , Yutaka Shionoiri , Kiyoshi Kato , Masataka Nakada
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office P.C.
- Agent Eric J. Robinson
- Priority: JP2008-136082 20080523
- Main IPC: H01L23/29
- IPC: H01L23/29

Abstract:
A conductive shield covering a semiconductor integrated circuit prevents electrostatic breakdown of the semiconductor integrated circuit (e.g., malfunction of a circuit and damage to a semiconductor element) due to electrostatic discharge. Further, with use of a pair of insulators between which the semiconductor integrated circuit is sandwiched, a highly reliable semiconductor having resistance can be provided while achieving reduction in the thickness and size. Moreover, also in the manufacturing process, external stress, or defective shapes or deterioration in characteristics resulted from electrostatic discharge are prevented, and thus the semiconductor device can be manufactured with high yield.
Public/Granted literature
- US20090289340A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2009-11-26
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