Invention Grant
- Patent Title: Semiconductor integrated circuit device comprising a plurality of semiconductor chips mounted to stack for transmitting a signal between the semiconductor chips
- Patent Title (中): 半导体集成电路器件包括安装到堆叠的多个半导体芯片,用于在半导体芯片之间传输信号
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Application No.: US12699006Application Date: 2010-02-02
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Publication No.: US08148814B2Publication Date: 2012-04-03
- Inventor: Futoshi Furuta , Kenichi Osada , Makoto Saen
- Applicant: Futoshi Furuta , Kenichi Osada , Makoto Saen
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2009-028037 20090210
- Main IPC: H01L23/34
- IPC: H01L23/34

Abstract:
In a through-via-hole path of semiconductor chips stacked in N stages, repeater circuits are provided in the respective semiconductor chips. For example, a signal transmitted from an output buffer circuit of the semiconductor chip is transmitted to an input buffer circuit of the semiconductor chip via the repeater circuits of the respective semiconductor chips. The respective repeater circuits can isolate impedances on input sides and output sides, and therefore, a deterioration of a waveform quality accompanied by a parasitic capacitance parasitic on the through-via-hole path of the respective semiconductor chips can be reduced and a high speed signal can be transmitted.
Public/Granted literature
- US20100200998A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2010-08-12
Information query
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