Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12438888Application Date: 2007-08-22
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Publication No.: US08148811B2Publication Date: 2012-04-03
- Inventor: Hiroyuki Shinogi , Katsuhiko Kitagawa , Kazuo Okada , Hiroshi Yamada
- Applicant: Hiroyuki Shinogi , Katsuhiko Kitagawa , Kazuo Okada , Hiroshi Yamada
- Applicant Address: US AZ Phoenix JP Gunma
- Assignee: Semiconductor Components Industries, LLC,SANYO Semiconductor Co., Ltd.
- Current Assignee: Semiconductor Components Industries, LLC,SANYO Semiconductor Co., Ltd.
- Current Assignee Address: US AZ Phoenix JP Gunma
- Agency: Morrison & Foerster LLP
- Priority: JP2006-229014 20060825
- International Application: PCT/JP2007/066703 WO 20070822
- International Announcement: WO2008/023826 WO 20080228
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H01L31/0232

Abstract:
This invention is directed to offer a semiconductor device in which a cavity space is easily provided in a specific region when a supporting member is bonded to a semiconductor substrate through an adhesive layer, and its manufacturing method. A resist layer is applied to an entire top surface of the semiconductor substrate 2, and exposure to transfer a pattern is performed. By subsequent development and selective removal of the resist layer, the resist layer is formed into a shape of a plurality of columnar structures 4. Then, an adhesive material made of an epoxy resin or the like is applied to the entire top surface of the semiconductor substrate 2. The adhesive material is gathered around the columnar structures 4 by itself to form an adhesive layer 5. Therefore, in contrast, the adhesive layer 5 does not deposit in a region where the cavity is to be formed. Then, the supporting member 6 is bonded through the columnar structures 4 and the adhesive layer 5. By bonding the supporting member 6, there is formed the cavity 7 surrounded with the semiconductor substrate 2, the columnar structures 3 and the supporting member 6.
Public/Granted literature
- US20090321903A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2009-12-31
Information query
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