Invention Grant
- Patent Title: Photodetector in germanium on silicon
- Patent Title (中): 光电检测器在硅上的锗
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Application No.: US11793238Application Date: 2004-12-24
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Publication No.: US08148794B2Publication Date: 2012-04-03
- Inventor: Gianlorenzo Masini , Lorenzo Colace , Gaetano Assanto
- Applicant: Gianlorenzo Masini , Lorenzo Colace , Gaetano Assanto
- Applicant Address: US CA Mountain View
- Assignee: Google Inc.
- Current Assignee: Google Inc.
- Current Assignee Address: US CA Mountain View
- Agency: Honigman Miller Schwartz and Cohn LLP
- International Application: PCT/EP2004/014714 WO 20041224
- International Announcement: WO2006/066611 WO 20060629
- Main IPC: H01L31/0232
- IPC: H01L31/0232

Abstract:
A photodetector structure includes a silicon-based waveguide in which optical signals to be detected travel in a given direction and are confined therein and a germanium layer disposed in contact with a portion of the silicon-based waveguide so that an evanescent tail of the propagating optical signal in the waveguide is coupled into the germanium layer. In addition, the germanium layer includes a mesa having a length along the signal propagating direction and a width in a direction substantially perpendicular to the propagating direction, in which the width of said mesa is smaller than its length. The photodetector also comprises a first and a second metal contacts, the first metallic contact being located on the germanium layer, the said second metallic contact being located on the silicon-based waveguide, the first and second contacts being used to collect electrons generated by light absorption to obtain an output electric signal.
Public/Granted literature
- US20080073744A1 Photodetector in Germanium on Silicon Public/Granted day:2008-03-27
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