Invention Grant
- Patent Title: Semiconductor device including semiconductor circuit made from semiconductor element and manufacturing method thereof
- Patent Title (中): 包括由半导体元件制成的半导体电路的半导体器件及其制造方法
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Application No.: US12603588Application Date: 2009-10-22
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Publication No.: US08148743B2Publication Date: 2012-04-03
- Inventor: Shunpei Yamazaki
- Applicant: Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP10-290802 19981013; JP10-297359 19981019
- Main IPC: H01L33/48
- IPC: H01L33/48
Abstract:
In the present invention, a semiconductor film is formed through a sputtering method, and then, the semiconductor film is crystallized. After the crystallization, a patterning step is carried out to form an active layer with a desired shape. The present invention is also characterized by forming a semiconductor film through a sputtering method, subsequently forming an insulating film. Next, the semiconductor film is crystallized through the insulating film, so that a crystalline semiconductor film is formed. According this structure, it is possible to obtain a thin film transistor with a good electronic property and a high reliability in a safe processing environment.
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