Invention Grant
- Patent Title: Light emitting device having a lateral passivation layer
- Patent Title (中): 具有侧面钝化层的发光器件
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Application No.: US13241984Application Date: 2011-09-23
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Publication No.: US08148734B2Publication Date: 2012-04-03
- Inventor: Sun Kyung Kim
- Applicant: Sun Kyung Kim
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: McKenna Long & Aldridge LLP
- Priority: KR10-2010-0009211 20100201
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L29/26 ; H01L31/12 ; H01L33/00 ; H01L29/22 ; H01L29/06 ; H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109

Abstract:
Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and a passivation layer protecting a surface of the light emitting structure. The passivation layer includes a first passivation layer on a top surface of the light emitting structure and a second passivation layer having a refractive index different from that of the first passivation layer, the second passivation layer being disposed on a side surface of the light emitting structure. The second passivation layer has a refractive index greater than that of the first passivation layer.
Public/Granted literature
- US20120012878A1 LIGHT EMITTING DEVICE HAVING A LATERAL PASSIBATION LAYER Public/Granted day:2012-01-19
Information query
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