Invention Grant
- Patent Title: Carbon-containing semiconductor substrate
- Patent Title (中): 含碳半导体衬底
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Application No.: US12509339Application Date: 2009-07-24
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Publication No.: US08148732B2Publication Date: 2012-04-03
- Inventor: Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou , Hung-Ta Lin
- Applicant: Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou , Hung-Ta Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing, Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing, Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A light-emitting diode (LED) device is provided. The LED device is formed on a substrate having a carbon-containing layer. Carbon atoms are introduced into the substrate to prevent or reduce atoms from an overlying metal/metal alloy transition layer from inter-mixing with atoms of the substrate. In this manner, a crystalline structure is maintained upon which the LED structure may be formed.
Public/Granted literature
- US20100051965A1 Carbon-Containing Semiconductor Substrate Public/Granted day:2010-03-04
Information query
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