Invention Grant
- Patent Title: Method and structure for hydrogenation of porous monocrystalline silicon substrates
- Patent Title (中): 多孔单晶硅衬底的氢化方法和结构
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Application No.: US11852823Application Date: 2007-09-10
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Publication No.: US08148629B2Publication Date: 2012-04-03
- Inventor: Yick Chuen Chan , Nathan W. Cheung , Chung Chan
- Applicant: Yick Chuen Chan , Nathan W. Cheung , Chung Chan
- Applicant Address: HK Kowloon
- Assignee: Silicon China (HK) Limited
- Current Assignee: Silicon China (HK) Limited
- Current Assignee Address: HK Kowloon
- Agency: Ella Cheong Hong Kong
- Agent Margaret Burke; Sam Yip
- Main IPC: H01L31/00
- IPC: H01L31/00 ; B05D5/12

Abstract:
A photovoltaic device and related methods of manufacture. The device has a support substrate having a support surface region. The device has a thickness of crystalline material characterized by a plurality of worm hole structures therein overlying the support surface region of the support substrate. The worm hole structures are characterized by a density distribution. The one or more worm hole structures have respective surface regions. In a specific embodiment, the thickness of crystalline material has an upper surface region. The device has a passivation material overlying the surface regions to cause a reduction of a electron-hole recombination process. A glue layer is provided between the support surface region and the thickness of crystalline material. A textured surface region formed overlying from the upper surface region of the thickness of crystalline material.
Public/Granted literature
- US20080105301A1 METHOD AND STRUCTURE FOR HYDROGENATION OF POROUS MONOCRYSTALLINE SILICON SUBSTRATRES Public/Granted day:2008-05-08
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