Invention Grant
- Patent Title: Method for forming dielectric films
- Patent Title (中): 电介质膜的形成方法
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Application No.: US12338121Application Date: 2008-12-18
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Publication No.: US08148275B2Publication Date: 2012-04-03
- Inventor: Yusuke Fukuchi , Naomu Kitano
- Applicant: Yusuke Fukuchi , Naomu Kitano
- Applicant Address: JP Tokyo JP Kawasaki-Shi
- Assignee: Canon Kabushiki Kaisha,Canon Anelva Corporation
- Current Assignee: Canon Kabushiki Kaisha,Canon Anelva Corporation
- Current Assignee Address: JP Tokyo JP Kawasaki-Shi
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2007-336731 20071227
- Main IPC: H01L21/71
- IPC: H01L21/71
Abstract:
A method for forming dielectric films including metal nitride silicate on a silicon substrate, comprises a first step of depositing a film containing metal and silicon on a silicon substrate in a non-oxidizing atmosphere using a sputtering method; a second step of forming a film containing nitrogen, metal and silicon by nitriding the film containing metal and silicon; and a third step of forming a metal nitride silicate film by oxidizing the film containing nitrogen, metal and silicon.
Public/Granted literature
- US20090170344A1 METHOD FOR FORMING DIELECTRIC FILMS Public/Granted day:2009-07-02
Information query
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