Invention Grant
US08148271B2 Substrate processing apparatus, coolant gas supply nozzle and semiconductor device manufacturing method
有权
基板加工装置，冷却剂气体供给喷嘴和半导体装置的制造方法
- Patent Title: Substrate processing apparatus, coolant gas supply nozzle and semiconductor device manufacturing method
- Patent Title (中): 基板加工装置，冷却剂气体供给喷嘴和半导体装置的制造方法
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Application No.: US11989698Application Date: 2006-07-19
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Publication No.: US08148271B2Publication Date: 2012-04-03
- Inventor: Masaaki Ueno , Akira Hayashida , Masakazu Shimada , Takenori Oka
- Applicant: Masaaki Ueno , Akira Hayashida , Masakazu Shimada , Takenori Oka
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2005-227606 20050805
- International Application: PCT/JP2006/314241 WO 20060719
- International Announcement: WO2007/018016 WO 20070215
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A substrate processing apparatus comprises a processing chamber for storing a boat supporting multiple substrates and for processing the multiple substrates, a heater unit installed around the processing chamber for heating the substrates, and a coolant gas supply nozzle including a pipe section extending perpendicular to a main surface of the substrate supported in the boat stored in the processing chamber, and a spray hole formed on the pipe section for spraying coolant gas to at least two of the multiple substrates, wherein the coolant gas supply nozzle is formed so that the cross sectional area of the pipe section in the area where the spray hole is formed is larger than the total opening area of the spray hole.
Public/Granted literature
- US20090291566A1 Substrate Processing Apparatus, Coolant Gas Supply Nozzle and Semiconductor Device Manufacturing Method Public/Granted day:2009-11-26
Information query
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