Invention Grant
US08148261B2 Methods of forming metal patterns in openings in semiconductor devices
有权
在半导体器件的开口中形成金属图案的方法
- Patent Title: Methods of forming metal patterns in openings in semiconductor devices
- Patent Title (中): 在半导体器件的开口中形成金属图案的方法
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Application No.: US12714571Application Date: 2010-03-01
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Publication No.: US08148261B2Publication Date: 2012-04-03
- Inventor: Tsukasa Matsuda , Gilheyun Choi , Jongmyeong Lee
- Applicant: Tsukasa Matsuda , Gilheyun Choi , Jongmyeong Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2009-0018132 20090303
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method of forming a semiconductor device is disclosed. A dielectric layer having a opening therein is formed on a semiconductor substrate. An inner surface of the opening is treated by plasma. A barrier metal layer is formed on the plasma-treated inner surface of the opening. A seed layer is formed on the barrier metal layer. A metal bulk layer is formed on the seed layer. High quality semiconductor devices can be fabricated by using these methods, which may stably fill the opening formed in the dielectric layer.
Public/Granted literature
- US20100227473A1 Methods of Forming Metal Patterns in Openings in Semiconductor Devices Public/Granted day:2010-09-09
Information query
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