Semiconductor device and manufacturing method thereof

Invention Grant

US08148248B2 Semiconductor device and manufacturing method thereof 有权

Title translation: 半导体装置及其制造方法

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Patent Title: Semiconductor device and manufacturing method thereof
Patent Title (中): 半导体装置及其制造方法
Application No.: US13053733

Application Date: 2011-03-22
Publication No.: US08148248B2

Publication Date: 2012-04-03
Inventor: Toshiaki Tsutsumi , Tomonori Okudaira , Keiichiro Kashihara , Tadashi Yamaguchi
Applicant: Toshiaki Tsutsumi , Tomonori Okudaira , Keiichiro Kashihara , Tadashi Yamaguchi
Applicant Address: JP Kanagawa
Assignee: Renesas Electronics Corporation
Current Assignee: Renesas Electronics Corporation
Current Assignee Address: JP Kanagawa
Agency: McDermott Will & Emery LLP
Priority: JP2008-130740 20080519
Main IPC: H01L21/3205
IPC: H01L21/3205 ; H01L21/4763

Semiconductor device and manufacturing method thereof

Abstract:

There is provided a semiconductor device having a metal silicide layer which can suppress the malfunction and the increase in power consumption of the device. The semiconductor device has a semiconductor substrate containing silicon and having a main surface, first and second impurity diffusion layers formed in the main surface of the semiconductor substrate, a metal silicide formed over the second impurity diffusion layer, and a silicon nitride film and a first interlayer insulation film sequentially stacked over the metal silicide. In the semiconductor device, a contact hole penetrating through the silicon nitride film and the first interlayer insulation film, and reaching the surface of the metal silicide is formed. The thickness of a portion of the metal silicide situated immediately under the contact hole is smaller than the thickness of a portion of the metal silicide situated around the contact hole.

Abstract(Chinese):

提供了具有金属硅化物层的半导体器件，其可以抑制器件的故障和功率消耗的增加。半导体器件具有包含硅并具有主表面的半导体衬底，形成在半导体衬底的主表面中的第一和第二杂质扩散层，形成在第二杂质扩散层上的金属硅化物，以及氮化硅膜和第一层间绝缘膜依次层叠在金属硅化物上。在半导体器件中，形成穿过氮化硅膜和第一层间绝缘膜并到达金属硅化物表面的接触孔。位于接触孔正下方的金属硅化物的一部分的厚度小于位于接触孔周围的金属硅化物的一部分的厚度。

Public/Granted literature

US20110207317A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-08-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）