Invention Grant
- Patent Title: Method for manufacturing a semiconductor structure, and a corresponding Semiconductor Structure
- Patent Title (中): 半导体结构的制造方法以及相应的半导体结构
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Application No.: US12282842Application Date: 2007-03-09
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Publication No.: US08148234B2Publication Date: 2012-04-03
- Inventor: Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
- Applicant: Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
- Applicant Address: DE Stuttgart
- Assignee: Robert Bosch GmbH
- Current Assignee: Robert Bosch GmbH
- Current Assignee Address: DE Stuttgart
- Agency: Kenyon & Kenyon LLP
- Priority: DE102006012857 20060321
- International Application: PCT/EP2007/052227 WO 20070309
- International Announcement: WO2007/107461 WO 20070927
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.
Public/Granted literature
- US20090236610A1 Method for Manufacturing a Semiconductor Structure, and a Corresponding Semiconductor Structure Public/Granted day:2009-09-24
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